Semiconductor memory device with capacitor

摘要

The semiconductor memory device includes a substrate and a transfer transistor formed on the substrate which has drain and source regions. A storage capacitor electrically coupled to either the drain or source region of the transfer transistor. The storage capacitor includes a trunk like conductive layer with the bottom electrically coupled to either the drain or source region of the transfer transistor. An upward extending part, after extending out a distance from the bottom, then extends in a parallel direction. At least one branch like conductive layer has an L-shaped cross section. An end terminal connects on the inner surface of the trunk like conductive layer. The trunk like conductive layer and the branch like up conductive layer constitute one storage electrode of the storage capacitor. A dielectric is formed on the trunk like conductive layer and the exposed surface of the branch-type down conductive layer. An upper conductive layer is formed on the dielectric to constitute one opposed electrode of the storage capacitor.