Halbleiterbauelement mit durch Ionenimplantation eingebrachten Fremdatomen und ein Verfahren zu dessen Herstellung

摘要

A semiconductor component is disclosed with foreign atoms introduced by implantation and electrically activated by a regeneration process. Immediately after the regeneration process, the component has a mean surface roughness of less than 15 nm and at least 10 % of the implanted foreign atoms are electrically activated.