Manufacturing semiconductor memory device with capacitor, for DRAM

摘要

The method involves (1) forming on a substrate a first insulator, overlaying a transfer transistor; (2) forming a pillar conductive layer, passing at least the first insulator, electrically coupled with one of the drain and source region of the transfer transistor; (3) on the pillar conductive layer surface and the first insulator, forming a first conductive layer; (4) removing the first conductive layer part located above the pillar conductive layer; (5) forming a second conductive layer, electrically coupled to the pillar conductive layer, and the first conductive layer; (6) patterning the first and second conductive layer to form a storage electrode of the storage capacitor, in which the storage electrode includes the first and second conductive layer, and pillar conductive layer; (7) on exposed surface of the first and second conductive layer, forming a dielectric layer; (8) on surface of the dielectric, forming a third conductive layer to constitute one opposed electrode of the storage capacitor.