Semiconductor memory device with capacitor

摘要

The semiconductor memory device with capacitor includes a substrate. A transfer transistor is formed on the substrate. The transistor includes a drain and a source region. A storage capacitor is electrically coupled to either the drain or the source of the transfer transistor. The storage capacitor consists of one trunk like conductive layer with one bottom. It is electrically coupled to either the drain and source of the transfer transistor. The trunk-type like conductive layer also has one upward-extending portion which extends from bottom with an upward direction. There is at least one first branch like conductive layer with an L-shape cross section. One end of the first branch like conductive layer connects on the outer surface of the trunk like conducive layer. The trunk like conducive layer and first branch like conductive layer constitute one storage electrode of the storage capacitor. A dielectric is formed on the exposed surface of the trunk like conductive layer and first branch like conductive layer. An upper conducive layer is formed on the dielectric constituting one opposed electrode of the storage capacitor.