| 摘要 |
<p>The invention concerns a magnetic field sensor with magnetoresistor bridge. The sensor comprises two multilayer magnetoresistors longitudinally mounted (GMR1, GMR2) and two multilayer magnetoresistors transversally mounted (GMR3, GMR4). Only the former are sensitive to the magnetic field to be measured (H). The sensor is applicable to the measurement of magnetic fields, in particular magnetic fields of low intensity.</p> |
