| 摘要 |
A semiconductor memory device with capacitor, in which the semiconductor memory device includes one substrate, one transfer transistor formed on the substrate, and one storage capacitor electrically coupled to one of drain and source region of the transfer transistor, comprises of the following steps: (1) on the substrate forming one first insulator, overlaying the transfer transistor; (2) forming one first conductive layer, passing at least the first insulator, electrically coupled with one of the drain and source region of the transfer transistor (3) above the first conductive layer periphery forming one pillar layer with at least one notch; (4) on the pillar layer spacer forming one second conductive layer; (5) on the first conductive layer, the second conductive layer and th pillar layer surface interactively forming first and second film layer at least once, in which the second film layer is made of conductive material, and the first one made of insulating material; (6) patterning the first and second film layer, separating the portion located above the pillar layer; (7) one the second film layer forming one second insulating layer, which approximately fills space in the second film layer notch; (8) forming one third conductive layer, overlaying the pillar layer, the first and second film layer, the second conductive layer and the second insulator; (9) patterning the third conductive layer and the second film layer, separating the third conductive layer located above the pillar layer and the third conductive layer and the second conductive layer located in the notch, one end terminal of the second conductive layer approximately connected to the first conductive layer periphery, one end of the third conductive layer approximately connected to another terminal of the second conductive layer, the first, second and third conductive layer constitute one trunk-type like conductive layer, and one end terminal of the second film layer connected to down surface of the third conductive layer, constituting one branch-type like conductive layer, and the first, second, third conductive layer and the second film layer constitute one storage node of the storage capacitor; (10) removing the pillar layer, the second insulator and the first film layer; (11) on exposed surface of the first, second, third conductive layer and the fourth second film layer, forming one dielectric; (12) on one surface of the dielectric, forming one fourth conductive layer to constitute one opposed electrode of the storage capacitor.
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