| 摘要 |
The semiconductor memory device comprises one transfer transistor formed on the substrate, and includes drain and source region, one storage capacitor, electrically coupled to one of drain and source of the transfer transistor, in which the storage capacitor consists of one trunk-type conductive layer with one bottom, electrically coupled to one of the drain and source of the transfer transistor, and having also one upward-extending portion, which extends from bottom with one approximately upward direction, at least one first branch-type like conductive layer, with one L-shape like cross-section, in which one end of the first branch-type like conductive layer connects on inner surface of the trunk-type like conducive layer. The trunk-type like conducive layer and first branch-type like conductive layer constitute one storage electrode of the storage capacitor. One dielectric, formed on exposed surface of the trunk-type like conductive layer and first branch-type like conductive layer, and upper conducive layer, formed on the dielectric, constitute one opposed electrode of the storage capacitor.
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