Druckkontakt-Halbleiteranordnung und Verfahren zum Herstellen derselben

摘要

According to this invention, a compression contacted semiconductor device is characterized by including a semiconductor pellet (20) having main electrodes formed a first major surface of one surface side and a second major surface of another surface side, and electrode posts arranged on at least one major surface of the semiconductor pellet through an electrode member (24) to sandwich the semiconductor pellet (20) to compress the electrodes of the first and second major surfaces, wherein a crystal defect density is distributed within a surface of the semiconductor pellet so that a carrier life time of at least heat generating portions in the surface of the semiconductor pellet which do not sufficiently conduct heat to the electrode posts is shorter than a carrier life time of major heat generating portions which sufficiently conduct heat to the electrode posts. For this reason, a current share of the heat generating portions which do not sufficiently conduct heat to the electrode members is decreased. Therefore, an amount of heat generation is reduced, and the breakdown voltage of a semiconductor element is increased.