| 摘要 |
PURPOSE:To prevent the increase of ohmic contact in an electrode, and to increase the area of electrode by providing an injection layer and an ohmic contact layer, said injection layer facing an ohmic contact layer and an active layer, and injecting carrier, which is injected by an ohmic contact between an electrode and the ohmic contact layer, into the active layer, while said ohmic contact layer is arranged so as to face an injection layer except a part facing a reflection mirror. CONSTITUTION:A columunar mesa part constituted by laminating a P-type active layer 2 and a P-type clad layer 3 is formed on an N-type clad layer 1. The mesa part is buried in a P-type block layer 4 and an N-type block layer 5 which are laminated for current constriction, thereby forming a semiconductor laser device of buried structure. A current injection layer 6 is formed on the mesa part and a current constricting layer surrounding the mesa part. A cap layer 71 is formed on the current injection layer 6 except a part corresponding to the mesa part. A reflection mirror 9 composed of TiO2/SiO2 is arranged on the current injection layer 6 corresponding to the mesa part. An electrode 8 composed of Au/Zn/Au is laminated only on the cap layer 71. |
