发明名称 Dry etching system
摘要 An etching system including a chamber, lower and upper electrodes provided in the chamber, a plasma light monitoring window provided in a side wall of the chamber, and an endpoint detecting device mounted outside the plasma light monitoring window. The plasma light monitoring window may be formed of high-purity aluminum oxide (Al2O3) as a transparent ceramic, so that plasma light generated in the chamber can be efficiently transmitted through the plasma light monitoring window to the endpoint detecting device. Accordingly, even when the plasma light monitoring window is etched, its transparency is not lost. Furthermore, since the content of impurity in the window is low, contamination of an object to be etched with the impurity can be suppressed.
申请公布号 US5718796(A) 申请公布日期 1998.02.17
申请号 US19960638470 申请日期 1996.04.26
申请人 SONY CORPORATION 发明人 YAMANE, TETSUYA
分类号 C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/00 主分类号 C23F4/00
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