| 摘要 |
A chromium target is disclosed for use in the formation of chromium films or sheets of reduced thickness by means of sputtering. The target has a recrystallized structure represented by the equation, A/B</=0.6, where A is the diffraction intensity of the (110) planes as determined by X-ray diffraction of a sputtered surface, and B is the diffraction intensity as determined from the sum of the (110), (200) and (211) planes. The target preferably has a deflective strength of above 500 MPa and an average crystal grain of below 50 mu m. The chromium target is produced by subjecting a starting chromium material to at least one stage of plastic working at a temperature of not higher than 1,000 DEG C., and subsequently by heat-treating the resulting chromium material for recrystallization at a temperature of higher than the recrystallization temperature of the chromium material but not higher than 1,200 DEG C.
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