METHOD FOR GROWING SILICON CRYSTAL PLATE, DEVICE THEREFOR, PRODUCTION OF SILICON CRYSTAL PLATE AND MANUFACTURE OF SOLAR CELL ELEMENT

摘要

PROBLEM TO BE SOLVED: To uniformly and continuously grow a very thin silicon crystal plate having a <=200μm thickness. SOLUTION: In this method, a silicon melt 3 is received in a crystal growth crucible 1 whose lower side is provided with a withdrawal port 4 and also, a platelike crystal growth member 5 is placed so that at least a front end 5b of the member 5 is positioned below the withdrawal port 4. Then, the melt 3 withdrawn from the withdrawal port 4 is brought into contact with the front end 5b of the member 5 and pulled downward to grow a silicon crystal plate 7.