| 摘要 |
A phase shift structure and a method for forming the phase shift structure are provided. The phase shift structure includes: a transparent substrate; a phase shifter etched into the substrate; and a pair of opaque members formed on the substrate on either side of the phase shifter. The phase shift structure is adapted to print an isolated linear feature such as an isolated line for a semiconductor integrated circuit. During a lithographic process using the phase shift structure, the inside edges of the opaque members do not print due to the effect of the phase shifter. The longitudinal edges of the printed feature correspond to the outside edges of the opaque members. The width of the phase shifter can be adjusted to minimize light leakage in the interior of the printed feature.
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