发明名称 |
Multiple implant lightly doped drain (MILDD) field effect transistor |
摘要 |
A multiple implant lightly doped drain ("MILDD") field effect transistor is disclosed. The transistor includes a channel, a gate, a dielectric structure that separates the gate from the channel, a source region and a drain region. The drain region has a first drain subregion, a second drain subregion and a third drain subregion. Each drain subregion has a dopant concentration that differs from that of the other two drain subregions. A method of forming the same is also disclosed.
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申请公布号 |
US5719425(A) |
申请公布日期 |
1998.02.17 |
申请号 |
US19960594516 |
申请日期 |
1996.01.31 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AKRAM, SALMAN;DITALI, AKRAM |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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