Method of forming crystalline compound semiconductor film

摘要

A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (SNDS) having a smaller nucleation density and a nucleation surface (SNDL) having a fine surface area sufficient for crystal growth only from a single nucleus and having a larger nucleation density (NDL) than the nucleation density (NDs) of the non-nucleation surface (SNDS) are arranged adjacent to each other an organometallic compound (VI) for supplying an element belonging to the group VI of Periodic Table represented by the general formula R1-Xn-R2 wherein n is an integer of 2 or more; R1 and R2 each represent alkyl; and X is S, Se or Te and a compound (II) for supplying an element belonging to the group II of Periodic Table in gas phase and applying crystal growth treatment according to the vapor phase method to the substrate to selectively form a crystalline group II-VI compound semiconductor film on the substrate.