发明名称 |
Fabrication method for a semiconductor device on a semiconductor on insulator substrate using a two stage threshold adjust implant |
摘要 |
A two stage threshold adjust implantation process is performed after field oxidation to avoid the effects of dopant redistribution and segregation. At any of several steps in a manufacturing process, only routine implant energy and dose adjustments are required to create a first and a second dopant profile (110, 120) that result in the reduction of edge leakage and threshold voltage sensitivity to device layer thickness of a semiconductor device on a semiconductor on insulator substrate.
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申请公布号 |
US5719081(A) |
申请公布日期 |
1998.02.17 |
申请号 |
US19950552656 |
申请日期 |
1995.11.03 |
申请人 |
MOTOROLA, INC. |
发明人 |
RACANELLI, MARCO;HUANG, WEN-LING M.;HWANG, BOR-YUAN C.;FOERSTNER, JUERGEN A. |
分类号 |
H01L21/336;H01L29/10;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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