SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor of a thin-film insulating gate type for use in an active matrix type electro-optical apparatus, which can reduce a leak current in a reversely biased mode, thereby reducing a parasitic capacitance between a gate electrode and a source/drain. SOLUTION: In the insulating gate type field effect transistor, a surface of a gate electrode 111 is anodized to thereby make a substantial channel length longer than a length of the gate electrode 111 in a channel length direction, thus forming on both sides of a channel region 109 an offset region or an amorphous impurity semiconductor region, which is not affected by an electric field of the gate electrode 111 at all or is very weak compared with that under the gate electrode 111.