| 摘要 |
PROBLEM TO BE SOLVED: To effectively suppress the dust production of the semiconductor substrate by polishing or etching away a part of the semiconductor substrate which is a source of dusts. SOLUTION: Polishing is carried out by a double-sided polishing device. At this time, the top surface 11 of the substrate 1 is polished into a normal mirror surface state and the reverse surface 21 is polished so that a polysilicon film as a film 2 for gettering is slightly left. The polysilicon film only need to be left even a little, so it is left as thin as possible, but the polysilicon film is so adjusted that the film is left concretely to a >=0.5μm thickness in average as a condition for leaving the film over the entire surface even a little in consideration of variance. This adjustment is made by controlling the abrasive cloth and polishing pressure of a polishing machine. Then cleaning for removing abrasives is carried out.
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