| 摘要 |
PROBLEM TO BE SOLVED: To improve the effect of photoelectric conversion without impairing passivation effect and backside field effect by a method in which a metal layer is formed between the first thin film layer, with which the recombination center on the inter face between a semiconductor substrate is inactivated, and the second thin film layer on which an electric field is formed on the interface with the semiconductor substrate. SOLUTION: In a solar battery, a silicon oxide film layer 36, to be used inactivate the recombination center of the backside surface layer part of a p-type semiconductor substrate 30 by providing an aperture part 11, is formed on the backside of the p-type semiconductor substrate 30 located on the opposite side of a light entering surface, and an aluminum metal layer 10 is formed by forming the silicon oxide film layer 36. Also, a p<+> type microscopic crystal layer 37, with which the electrons are expelled as the minor carrier excited on the side of the p-type semiconductor substrate 30 on the aluminum metal layer 10 and a p<+> type microscopic crystal layer 37 with which holes are collected as a major carrier, is formed. Besides, metal backside electrode layer 38 of aluminum and silver, etc., is formed on the p<+> type microscopic crystal layer 37. |
