| 摘要 |
PROBLEM TO BE SOLVED: To form an Si nitride film wherein an Si rich transition layer is hardly formed, by forming an Si film or an Si oxide film, bringing liquid having reducing capability into a contact reaction with the Si film or the Si oxide film of a substratum before formation of an Si nitride film, and reduction-treating the substratum film. SOLUTION: In order to form an Si nitride film, SiH4 or S2 H6 is used as gas having reducing capability. A DRAM capacitor has a capacitor structure comprising a lower electrode composed of a poly Si film which is activated by the doping of phosphorus atoms and heat treatment, a dielectric film composed of an Si nitride film, and an upper electrode composed of a poly Si film identical to the lower electrode. When the lower electrode is formed, a poly Si film is firstly formed. The poly Si film is doped with phosphorus atoms by thermal diffusion. Pattering is performed by a lithography process and an etching process, and the lower electrode is formed. |
