| 摘要 |
PROBLEM TO BE SOLVED: To increase the operating speed of a semiconductor device by reducing the resistance of the conductive part of a circuit pattern by forming the conductive pattern made of a nonmetallic material using polysilicon, and suppressing the formation of a crystal growing nucleus by adjusting the pressure at the initial stage of the formation of the polysilicon. SOLUTION: After a gate oxide film 2 and an element separating area 3 are formed on a semiconductor substrate 1, a polysilicon film 14 which becomes the gate wiring 4 of a circuit pattern and is made of a nonmetallic material is formed on the film 2 and area 3 by the LP-CVD method. The grain size of the film 14 is decided at the initial stage of the formation of the film 14 by raising the pressure in a furnace and adjusting the pressure and maintained until the formation of the film 14 is completed. Finally, the gate wiring 4 is formed by performing impurity diffusion and patterning. Therefore, a wiring section having a low electrical resistance can be formed and the operating speed of a semiconductor device can be increased. |
