| 摘要 |
PROBLEM TO BE SOLVED: To decrease the occupation area of a photoelectric conversion device by a method in which a photoelectric conversion element, consisting of a p-n junction, and a thin film laminated transformer are provided on the same semiconductor substrate, and the thin film laminated transformer is formed directly above the photoelectric conversion element through an insulating layer. SOLUTION: On a photoelectric conversion device 1, an incident light is made incident from the backside 19 on the opposite side of the surface where a p-n junction 4 is formed. At this point, as both p-type silicon and n-type silicon are connected to the primary coil 25 of a thin film laminated transformer 9 through metal contact pads 10 and 11, the power generated by the irradiation of a semiconductor laser beam flows in the primary side coil 25 of the thin film laminated transformer 9, then it is transmitted to a secondary side coil 27, and it can be taken out to outside as the output of the photoelectric conversion device 1. On the photoelectric conversion device 1, the p-n junction 4 of a photoelectric conversion element and the thin film laminated transformer 9 are laminated on the same substrate 2, and as they are arranged very close with each other, their occupation area can be reduced, parasitic inductance can be minimized and loss can be reduced. |
