| 摘要 |
PROBLEM TO BE SOLVED: To contrive a reduction in a junction capacitance and to enhance the yield of a semiconductor light-emitting device, by a method in which a part, which is used as a luminous part, is left in a specified width and ion- implanted high-resistance regions, which cross an active layer, are respectively formed on both sides of the luminous part. SOLUTION: A mask layer is removed and a second conductivity type cap layer 9 is epitaxially grown all over the surface of an intermediate layer 5. A part, which is used as a luminous part, if left in a width of 15 to 150μm on both sides of a striped bridge 6, which lies between both sides of the luminous part being held in the luminous part, in a depth, which crosses the layer 3 from the upper part of the layer 9 and reaches a first conductivity type clad layer 2 which is formed under the layer 3, and ions are implanted in the layer 3 in such a way as to cross the layer 3 to form high-resistance regions 21. Thereby, a reduction in a parasitic capacitance due to a reduction in a junction capacitance can be contrived and the high yield of a semiconductor light- emitting device can be contrived in a mass production manner.
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