发明名称 LIGHT RECEIVING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a light receiving element which can be suitably used as an optical sensor which has a high speed operation, a high light sensitivity and an electromagnetic shielding effect. SOLUTION: A PiN photodiode is formed with use of an N type semiconductor substrate 1 having a low impurity concentration. To this end, a light receiving element having a P type high-concentration layer 2 provided on the semiconductor substrate 1 as a light receiving surface is fixedly bonded at its bottom side with insulating adhesive 5 onto a mounting part of a frame 4. The frame 4 is provided with such an electrically conductive wall as opposed to a side face of the light receiving element. The frame 4 and the P type high- concentration layer 2 are connected to grounding potential. An N type high- concentration layer 3 is provided around the P type high-concentration layer 2 so as to surround it. Further provided around the P type high-concentration layer 2 is a P type high-concentration layer 2 which surrounds the layer 2 and which is separately biased and is covered with a light shielding electrode.
申请公布号 JPH1041537(A) 申请公布日期 1998.02.13
申请号 JP19960194985 申请日期 1996.07.24
申请人 SANYO ELECTRIC CO LTD;TOTTORI SANYO ELECTRIC CO LTD 发明人 NISHIMURA SUSUMU;YUMOTO TAKASHI
分类号 H01L27/14;H01L31/02;H01L31/10;(IPC1-7):H01L31/10 主分类号 H01L27/14
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