| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which can form a chemical amplification type resist pattern excellent in resolution and configuration, even on a substrate showing different hydrophobic natures. SOLUTION: Hydrophobic nature on a substrate 1 is previously obtained by measuring, e.g. contact angles. On the basis of the measured results, the treatment condition of adhesive 7 is set, and adhesive treatment is performed. After resist 3 is formed, a desired mask 4 is used and selective exposure is performed by KrF excimer laser 5. After heating 6, a resist pattern 3A is formed by alkali development of the resist 3. By this method, a resist pattern excellent in resolution and configuration can be realized, and contributes to device manufacturing excellent in industrial yield. |
