| 摘要 |
<p>PROBLEM TO BE SOLVED: To design a diode with a high degree of freedom by a method in which a polysilicon diode, consisting of p-type polysilicon and n-type polysilicon having a p-n junction surface on the mutual boundary surface through an insulating layer, is provided on a semiconductor substrate. SOLUTION: A polysilicon diode 16 is formed by a p-type polysilicon 16a and an n-type polysilicon 16b formed on an insulating layer 12, and the boundary surface of both silicons 16a and 16b form a p-n junction. A polysilicon diode 16 is formed on the upper surface of the insulating layer 12, and as this polysilicon diode 16 does not entirely receive the affection of the condition and the structure of a substrate 1, it can be designed with a wide degree of freedom in arrangement, layout, characteristics, etc., when compared with the diode formed in a well and a semiconductor substrate. Besides, the polysilicon diode 16 can be formed on the upper surface of a CMOS circuit, for example, by a process other than the CMOS process.</p> |
