发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To stably form metal balls for a long time by preventing metal particles from rapidly depositing on the surface of a torch electrode or capillary. SOLUTION: A wire passing through a bonding capillary 1 to protrude its part 2 from the capillary 1, a voltage is applied between this part 2 and torch electrode 3 to cause a spark discharge therebetween, thereby forming a metal ball on the wire top. In such a semiconductor device manufacturing method, the discharge start voltage is dispersed in the range of several hundreds volts to a thousand and several hundreds volts and adjusted so as to provide peaks at a lower and higher voltage zones of the dispersed voltage distribution.
申请公布号 JPH1041336(A) 申请公布日期 1998.02.13
申请号 JP19960197429 申请日期 1996.07.26
申请人 SHARP CORP 发明人 TAMAOKI KAZUO
分类号 H01L21/60 主分类号 H01L21/60
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