| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emissive end face formation method which can form, by cleavage, the light emissive end face of a semiconductor light emitting element using a nitride group III-V compound semiconductor without using an expensive substrate such as an SIC substrate or the like, and enables the takeout of an electrode to be performed from both sides of top and bottom, and does not hinder the movement of the semiconductor light emitting element, either. SOLUTION: Laser structure is made by stacking GaN semiconductor layers in multilayer on a C-face sapphire substrate 1, and then an Ni/Au film 7 is made thereon. An Ni/Au/In film 9 is made on a p-type GaP substrate 8 of (100) face azimuth. The GaN semiconductor layer on the C-face sapphire substrate 1 and the p-type GaP substrate 8 are joined with each other through the Ni/Au film 7 and the Ni/Au/In film 9. At that time, the direction where the cleavage of the p-type GaP substrate 8 is easy and the direction where the cleavage of the GaN semiconductor layer is easy are conformed to each other. After joining, the end face of the resonator, that is, the light emissive end face is made by removing the C-face sapphire substrate 1, and cleaving the p-type GaP substrate 8 in the direction where the cleavage is easy thereby cleaving the GaN semiconductor layer. |
