| 摘要 |
PROBLEM TO BE SOLVED: To improve the brightness of an yellowish green GaP light emitting element by a method in which the sum of density of the impurity transition element in a light emitting layer or a buffer layer is determined within a specific range. SOLUTION: In a buffer layer growing method, a Ga solution 16 is arranged on an n-type GaP substrate 11 as n-type impurities, for example. Then, after the surface of the n-type GaP substrate 11 has been melt back, a GaP buffer layer 12 is grown by depositing GaP to the n-type GaP substrate 11 from a Ga solution 16. Subsequently, the substrate 11 and the Ga solution 16 are separated, and the growth of the GaP buffer layer 12 is finished. At this point, by controlling the sum of the densities of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu in the light emitting layer, i.e., the N-doped n-type GaP layer or the n-type GaP buffer layer below 1×10<15> cm<-3> and 1×10<16> cm<-3> , respectively. The density of the center of non-light emission recombination of a light emitting layer and the light absorption of the buffer layer can be decreased. As a result, the brightness of a yellowish green GaP light emitting element can be improved. |
