发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To enable highly precise wiring by forming a resist pattern of high precision while improving reliability of a semiconductor device by preventing formation of a floating pattern. SOLUTION: In a manufacturing method of a semiconductor device wherein a photosensitive resist 5 for selectively forming an upper layer wiring pattern 4a is applied on a lower layer wiring pattern 2 formed in a semiconductor board 1, a resist mask pattern is formed by performing selective exposure for the photosensitive resist by using an exposure mask 6 and an upper layer wiring pattern 4 is formed by using the resist mask pattern, a dummy pattern part 7a covering a surface stepped part S generated by the lower layer wiring pattern 2 is provided in the exposure mask 6 integrally with an original light screening pattern 7 for forming an upper layer wiring pattern 4a. Light to the stepped part S is shaded by the dummy pattern part 7a, light reflection in the stepped part S is eliminated and a resist pattern of high precision can be formed by preventing halation.</p>
申请公布号 JPH1041302(A) 申请公布日期 1998.02.13
申请号 JP19960197528 申请日期 1996.07.26
申请人 NEC CORP 发明人 KAWAZOE TAKAYUKI
分类号 H01L21/3205;H01L21/027;H01L23/52;H01L23/528;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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