摘要 |
<p>PROBLEM TO BE SOLVED: To enable highly precise wiring by forming a resist pattern of high precision while improving reliability of a semiconductor device by preventing formation of a floating pattern. SOLUTION: In a manufacturing method of a semiconductor device wherein a photosensitive resist 5 for selectively forming an upper layer wiring pattern 4a is applied on a lower layer wiring pattern 2 formed in a semiconductor board 1, a resist mask pattern is formed by performing selective exposure for the photosensitive resist by using an exposure mask 6 and an upper layer wiring pattern 4 is formed by using the resist mask pattern, a dummy pattern part 7a covering a surface stepped part S generated by the lower layer wiring pattern 2 is provided in the exposure mask 6 integrally with an original light screening pattern 7 for forming an upper layer wiring pattern 4a. Light to the stepped part S is shaded by the dummy pattern part 7a, light reflection in the stepped part S is eliminated and a resist pattern of high precision can be formed by preventing halation.</p> |