| 摘要 |
PROBLEM TO BE SOLVED: To easily and quickly verify the lateral diffusion distance of an etch- resistance component, without special apparatus. SOLUTION: The surface of a photosensitive film is exposed to form an etch-resistance component-contained layer, using a mask having many unit patterns 31-35 which are composed of first patterns 311 -351 and second patterns 312 -352 and have different verifying intervals S1 -S5 between patterns. Using this component-contained layer as a mask, the photosensitive film is etched to form first and second photosensitive film pattern corresponding to the first and second patterns 311 -351 and 312 -352 . The unit patterns having the first and second photosensitive film patterns coupled to eliminate the verifying intervals are detected and a half the largest verifying interval among the detected unit patterns is regarded as a lateral diffusion distance of the etch-resistance component. |
