PROCESS FOR MANUFACTURING AN INFRARED-EMITTING LUMINESCENT DIODE

摘要

A process is disclosed for manufacturing an infrared-emitting luminescent diode. A series of layers is applied on a semiconductor substrate (1) preferably made of GaAs. Counting from the semiconductor substrate (1), the series of layers comprises a first AlGaAs covering layer (2), an active layer (3) containing GaAs and/or AlGaAs and a second AlGaAs covering layer (4). The first AlGaAs covering layer (2) and the active layer (3) are produced by an MOVPE (metallo-organic vapour phase epitaxy) process and the second AlGaAs covering layer (4) is produced by an LPE (liquid phase epitaxy) process. In addition, an electroconductive decoupling layer (5) which is optically transparent in the infrared spectral range and has at least about 10 mu m thickness is deposited on the second AlGaAs covering layer (4) by an LPE (liquid phase epitaxy) process.