SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

A semiconductor device having a capacitor in which oxide dielectric is used. The oxidation of the interface between the lower electrode and the oxide dielectric is suppressed. The oxide dielectric capacitor is constituted of the lower electrode (11), the oxide dielectric (16) formed on the electrode (11), and upper electrode (17) formed on the dielectric (16). The electrode (11) includes a two-layer conductive oxide layer (12) and the layers (14 and 15) constituting the layer (12) have the same crystal structure and contain the same element. The layer (14) on the substrate (10) side contains oxygen deficiency. Since the layer (14) functions as an oxygen diffusion preventive layer, the oxidation of the component (13) of the lower electrode (11) adjacent to the layer (14) and the interface between the component (13) and the layer (14) is suppressed and an excellent electrical contact between the component (13) and layer (14) is ensured.