发明名称 Semiconductor thermoelectric manufacturing method
摘要 The hot extrusion process involves using a cylindrical heating sleeve (12) that surrounds an extrusion die (11). The die has a main section in the form of a hopper with a 20mm diameter and this reduces in a cone section (111b) to a 2mm nozzle (16). The powder alloy of thermoelectric material (11a) is extruded by a plunger (13) while being heated at 200 to 580 degrees Celsius to produce a continuous pulverised sinter material out of thermoelectric semiconductor. e.g. of BixSbyTezSea. The sintered output is then cut into multiple elements.
申请公布号 DE19734471(A1) 申请公布日期 1998.02.12
申请号 DE19971034471 申请日期 1997.08.08
申请人 AISIN SEIKI K.K., KARIYA, AICHI, JP 发明人 TAUCHI, HITOSHI, KARIYA, AICHI, JP;HORI, SATORU, NAGOYA, AICHI, JP;EBISUMORI, KAZUO, TSUKUBA, IBARAGI, JP
分类号 B22F3/20;H01L35/16;H01L35/34;(IPC1-7):H01L35/28 主分类号 B22F3/20
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