| 摘要 |
PROBLEM TO BE SOLVED: To prevent particles from being produced when a CVD film is deposited by installing a guide ring for directing a purge gas flow from a purge gas blowing section provided below the peripheral edge section of a substrate to be treated toward a point above the center of the surface to be treated of the substrate. SOLUTION: Before a blanket W film 24 is deposited on a semiconductor wafer 3, an interlayer insulating film 22 is deposited on a semiconductor substrate 21 and a Ti film and a TiN film 23 are deposited on the entire surface of the substrate by the sputtering method. Then a guide ring 30 is provided outward from the peripheral edge section of the wafer 3 and the angleθbetween the bottom face of the ring 30 and the side face of the ring 30 is adjusted to 80 deg. so that a purge gas flow can be discharged upward from the side wall of the wafer 3 and toward a point above the center of the wafer 3 through the clearance between a susceptor 8 and ring 30. Therefore, the occurrence of particles which are produced when a CVD film is deposited can be prevented.
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