Verfahren zur Herstellung eines ferroelektrischen Film

摘要

Ferroelectric film device comprises a film of compsn. (PbxLay)(TizZrw)O3 where: x = 0.70-1.09, x+y = 0.9-1, z = 0.95-1 and w = 0; or x = 1, y = 0, z = 0.45-1 (not 1) and z+w = 1; or x = 0.83-1 (not 1), y+x = 1, z = 0.5-1 (not 1) and z+w = 0.96-1. The film is deposited on a substrate, pref. MgO and two electrodes are attached. At least 75% of the polarisation axes in the film are oriented in direction nearly perpendicular to the film surface.