| 摘要 |
Plasma-supported plasma etching of metals, metal oxides and their mixtures involves using an etching gas (mixture). During the etching process, a complex former is provided. The complex former is mixed with the etching gas (mixture) or produced in-situ in the etching gas (mixture). The complex former is CO, phosphine or phosphine derivative; or 1,3-diketone, carboxylic acid, diamine, polyamine, diether or polyether. Inert gas or nitrogen is used in the etching gas mixture. The inert gas is Ar. An halogen or an halogen-contg. compound, e.g. chlorine, bromine, methane, ethane or propane, is provided in the etching gas mixture. Oxygen, O3, N2O, NO or NO2 is especially provided in the etching gas mixture. The etching rate and/or selectivity are adjusted by pressure, gas mixture composition, etching temperature, plasma performance or kinetic energy of the atoms. The electrode materials are Pt, Pd, Rh, Ir, Ru, Os or Au, or their alloys. The plasma is produced in a reactor for magnetically assisted reactive ion etching, in triode reactors or in low pressure, high ion stream reactors. |
