发明名称 |
Semiconductor laser array |
摘要 |
<p>A semiconductor laser array has an array of a plurality of laser active sections mounted on a submount, with a common p-side electrode sandwiched therebetween. The laser active sections formed on a semiconductor substrate and separated from each other by separation channels are bonded onto the common p-side electrode in a junction-down fashion wherein the top layer of the laser active sections are bonded to the common p-side electrode. The semiconductor substrate are polished at the back surface for separation of the laser active sections from each other, followed by forming an n-side electrode for each of the laser active sections. The semiconductor laser array can be formed in a uniform thickness and can be driven by N-P-N transistor at a high speed.</p> |
申请公布号 |
EP0823760(A2) |
申请公布日期 |
1998.02.11 |
申请号 |
EP19970113502 |
申请日期 |
1997.08.05 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
IWASE, MASAYUKI |
分类号 |
H01L27/15;H01S5/00;H01S5/02;H01S5/042;H01S5/227;H01S5/40;(IPC1-7):H01S3/25;H01L33/00;H01S3/025 |
主分类号 |
H01L27/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|