发明名称 Semiconductor laser array
摘要 <p>A semiconductor laser array has an array of a plurality of laser active sections mounted on a submount, with a common p-side electrode sandwiched therebetween. The laser active sections formed on a semiconductor substrate and separated from each other by separation channels are bonded onto the common p-side electrode in a junction-down fashion wherein the top layer of the laser active sections are bonded to the common p-side electrode. The semiconductor substrate are polished at the back surface for separation of the laser active sections from each other, followed by forming an n-side electrode for each of the laser active sections. The semiconductor laser array can be formed in a uniform thickness and can be driven by N-P-N transistor at a high speed.</p>
申请公布号 EP0823760(A2) 申请公布日期 1998.02.11
申请号 EP19970113502 申请日期 1997.08.05
申请人 THE FURUKAWA ELECTRIC CO., LTD. 发明人 IWASE, MASAYUKI
分类号 H01L27/15;H01S5/00;H01S5/02;H01S5/042;H01S5/227;H01S5/40;(IPC1-7):H01S3/25;H01L33/00;H01S3/025 主分类号 H01L27/15
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