发明名称 Current detector circuit
摘要 In a current detector circuit wherein the sense current (Is) flowing through a sense transistor (2) for sensing part of the main current (Io) flowing through a main element transistor (1) is flowed through the detection resistor (Rs) to cause the bipolar or MOS control transistor (3) to detect the voltage drop (Vs) across the detection resistor (Rs), a compensation diode (12) connected to the base or gate of the control transistor (3) and the emitter of the sense transistor (2) and a forward bias generation resistor element (13) for generating a forward bias applied to the diode (12) for a time interval during which the main current (Io) flows are arranged. When a sense current (Is) flowing through a sense element (2) for sensing part of a main current (Io) flowing through a main element (1) is to be flowed through a detection resistor (Rs) to cause a control transistor (3) to detect a voltage drop (Vs) across through the detection resistor (Rs), the temperature dependence of a threshold voltage between the base and emitter of the control transistor (3) is compensated for, and an output current (Io) is detected with an almost constant current level during an operation. <IMAGE>
申请公布号 EP0706265(A3) 申请公布日期 1998.02.11
申请号 EP19950115706 申请日期 1995.10.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MURAKAMI, KOICHI;OOMICHI, MOTOHIRO
分类号 H01L27/04;H01L21/822;H01L23/58;H01L29/739;H01L29/78;H03K17/082;H03K17/14;(IPC1-7):H03K17/082 主分类号 H01L27/04
代理机构 代理人
主权项
地址