发明名称 |
Semiconductor device and method of forming the same |
摘要 |
A semiconductor device or a semiconductor integrated circuit includes a field effect transistor having a source region, a drain region and a channel regions formed within a semiconductor substrate. A lower wiring is formed on the semiconductor substrate to form a gate electrode and its extension and oxidized to form an oxide film covering the lower wiring. An upper wiring is formed over the lower wiring on the semiconductor substrate to make contact with the drain or source region. The lower wiring is electrically insulated from the upper wiring by the oxide film.
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申请公布号 |
US5716871(A) |
申请公布日期 |
1998.02.10 |
申请号 |
US19930117709 |
申请日期 |
1993.09.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;MASE, AKIRA;UOCHI, HIDEKI;TAKEMURA, YASUHIKO |
分类号 |
G02F1/1362;H01L21/336;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L21/44 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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