发明名称 |
Method of forming a wiring layer of a semiconductor device using reflow process |
摘要 |
A method of manufacturing a semiconductor device having the steps of: forming an insulating layer on a substrate having a semiconductor surface; forming a contact hole in and through the insulating layer; forming a conductive film on the inner surface of the contact hole and on the surface of the insulating film; forming a vapor deposited titanium film on the inner wall of a vacuum chamber; placing the substrate formed with the conductive film in the vacuum chamber; and heating the substrate and reflowing the conductive film. A good wiring layer can be formed by suppressing generation of a void during a reflow process.
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申请公布号 |
US5716869(A) |
申请公布日期 |
1998.02.10 |
申请号 |
US19960711986 |
申请日期 |
1996.09.10 |
申请人 |
YAMAHA CORPORATION |
发明人 |
HIBINO, SATOSHI;YAMAHA, TAKAHISA |
分类号 |
H01L21/28;H01L21/203;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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