Structure for forming an improved quality silicidation layer

摘要

A semiconductor device having a silicide layer with substantially even thickness, and a method for making a silicide layer having substantially even thickness in a semiconductor device are disclosed. A prefereably doped polycrystalline silicon layer is formed as a first conductive layer on an insulating underneath layer. After that, an undoped polycrystalline silicon is deposited on the first conductive layer as a buffer layer for preventing silicon diffusion. A second conductive layer is formed thereon. Subsequently, a refractory metal layer is formed on the second conductive layer, and a heating treatment is carried out to form a silicide layer on the first conductive layer from the materials of the buffer layer, second conductive layer and refractory metal layer.