发明名称 Method for manufacturing a semiconductor device
摘要 A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.
申请公布号 US5716857(A) 申请公布日期 1998.02.10
申请号 US19930073689 申请日期 1993.06.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ZHANG, HONGYONG
分类号 H01L21/20;H01L21/336;H01L21/77;H01L21/84;(IPC1-7):H01L21/84 主分类号 H01L21/20
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