Dark rims for attenuated phase shift mask

摘要

A mask for use in semiconductor fabrication which includes a light transparent substrate, preferably glass, having a border and light semitransparent material having light transmissivity preferably in the range of from about 6 to about 10 percent disposed thereon within the border. A light opaque layer which is sensitive to light and which can be patterned and have a predetermined portion thereof removed in response to selective exposure to light is disposed along substantially the entire border of the substrate. The mask can further include a region of light semitransparent material disposed around the border and under the light opaque layer. The light opaque layer is preferably a photosensitive polyimide.