| 摘要 |
A switching circuit further decreasing the insertion loss. The first capacitor is connected between the drain terminal of the field effect transistor and the ground and/or the second capacitor is connected between the source terminal of the field effect transistor and the ground, and the capacitances of the first and/or second capacitors are set to optimum values. Accordingly, the switching circuit can be easily obtained which is low in insertion loss at a desired frequency. Besides, since a bias circuit for generating bias voltage from control voltage which is applied to the two control terminals of a switching circuit using a field effect transistor is provided, a switching circuit which does not need exclusive bias terminals and is superior in isolation property can be realized.
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