| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a problem of graphitization to cause reduction in crystal qualities in a conventional apparatus for forming silicon carbide. SOLUTION: This apparatus is a device for forming SiC on a nucleus, is equipped with a first vessel 100 which forms a crucible, is composed of at least one wall (102, 110, 112) and is capable of receiving a SiC nucleus 122, a SiC powder storage container 118 for forming a SiC source and a heating means 120 capable of establishing a first temperature gradient between the SiC source and the second SiC nucleus 122. The wall (102, 110, 112) is enclosed by at least one SiC layer 116. |
