| 摘要 |
<p>The invention discloses a high frequency MOS transistor structure with an extended drift region, which modulates the resistance in the drift region of the MOS transistor. The extended gate layer is obtained by an extra semiconductor layer forming a second MOS structure on top of a thin gate oxide layer. The electrical field will then be uniformly distributed laterally in the extended drift region. This design makes it possible to produce a MOS transistor with a short channel length and an extended drift region with low doping concentration and still having very low on-resistance together with a high breakdown voltage.</p> |
