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发明名称
MOS-Gate-kontrollierter Thyristor
摘要
申请公布号
DE69223738(D1)
申请公布日期
1998.02.05
申请号
DE19926023738
申请日期
1992.10.30
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP
发明人
NAKANISHI, HIDETOSHI, C/O INTELLECTUAL PROP. DIV., MINATO-KU, TOKYO 105, JP;USUI, YASUNORI, C/O INTELLECTUAL PROP. DIV., MINATO-KU, TOKYO 105, JP
分类号
H01L29/745;H01L29/749;(IPC1-7):H01L29/74
主分类号
H01L29/745
代理机构
代理人
主权项
地址
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