Halbleiteranordnung mit einem Heteroübergang-Bipolartransistor und Verfahren zu seiner Herstellung,申请号DE19926023670-传众专利搜索

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发明名称	Halbleiteranordnung mit einem Heteroübergang-Bipolartransistor und Verfahren zu seiner Herstellung
摘要
申请公布号	DE69223670(D1)	申请公布日期	1998.02.05
申请号	DE19926023670	申请日期	1992.03.05
申请人	KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP	发明人	MORIZUKA, KOUHEI, C/O INTELLECTUAL PROPERTY, 1-1-1, SHIBAURA, MINATO-KU, TOKYO, JP
分类号	H01L29/165;H01L21/28;H01L21/331;H01L29/423;H01L29/45;H01L29/47;H01L29/73;H01L29/737;(IPC1-7):H01L29/737	主分类号	H01L29/165
代理机构		代理人
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