Lithographic mask production without need for SOI wafer

摘要

A lithographic mask production process involves: (a) forming insulation film patterns (21) spaced apart by predetermined distances on a substrate (20); (b) forming doped regions (22) in the exposed substrate regions using the patterns (21) as masks; (c) forming a conductive layer (23) over the entire surface of the doped regions (22) and the patterns (21) and then patterning the conductive layer (23) to form first microscopic holes; (d) selectively removing material from the substrate back face until each doped region (22) is exposed; and (e) selectively etching the doped regions (22) to form second microscopic holes in the doped region sections corresponding to the first microscopic holes. Also claimed is a lithographic mask with a semiconductor substrate (20) having patterns, doped regions between the patterns, back face trenches exposing the doped regions, and holes passing through the doped regions.